Electronic structures of p-type GaN codoped with Be or Mg as the acceptors and Si or O as the donor codopants
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
2. Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE
3. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
4. Hole Compensation Mechanism of P-Type GaN Films
5. Role of hydrogen in doping of GaN
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3. First‐Principles Study of the Effects of Interstitial H and Point Vacancies on the p‐Type of Conductive Properties of Be/Mg/Ca‐Doped GaN;physica status solidi (b);2021-04-28
4. The Difficulty and Solution of Mg-doped in GaN;IOP Conference Series: Materials Science and Engineering;2020-01-01
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