Structural properties of compressive strained Ge channels fabricated on Si (111) and Si (100)
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aae575/pdf
Reference17 articles.
1. Ge (100) and (111) N- and P-FETs With High Mobility and Low-$T$ Mobility Characterization
2. Greatly enhanced generation efficiency of pure spin currents in Ge using Heusler compound Co2FeSi electrodes
3. Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts
4. Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures
5. An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition
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1. Fabrication of crack-free strained SiGe/Ge multiple quantum wells on Ge-on-Si(111) by the patterning method;Materials Science in Semiconductor Processing;2024-07
2. Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface;Nanomaterials;2023-01-04
3. Significant reduction of crack propagation in the strained SiGe/Ge(111) induced by the local growth on the depth-controlled area patterning;Applied Physics Express;2022-12-19
4. Crack formation in strained SiGe grown on Ge-on-Si (111) and its suppression by patterning substrates;Materials Science in Semiconductor Processing;2020-10
5. Critical thickness of strained Si1-xGex on Ge(111) and Ge-on-Si(111);Applied Physics Express;2019-07-25
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