Ultra-thin and conformal epitaxial NiSi2 film on Si fins by barrier-induced phase modulation (BPM) technique-Reference-Cited by-同舟云学术

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Ultra-thin and conformal epitaxial NiSi2 film on Si fins by barrier-induced phase modulation (BPM) technique

Published:2020-02-14 Issue:3 Volume:35 Page:035014
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Yang Yuancheng^ORCID,Xuan Haoran,Li Xiaokang,Zhang Baotong,Dong Xiaoqiao,Sun Shuang,Cai Qifeng,Xu Xiaoyan,An Xia,Li Ming

Funder

the National 02 Project

Program of National Natural Science Foundation of China

National Key Research and Development Plan

111 Project

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1361-6641/ab6bfa/pdf

Reference21 articles.

1. Parasitic Resistance Reduction Strategies for Advanced CMOS FinFETs Beyond 7nm

2. Ti and NiPt/Ti liner silicide contacts for advanced technologies

3. Challenges of nickel silicidation in CMOS technologies

4. Metal Silicides: Active elements of ULSI contacts

5. Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design on Formation of Nickel Silicide by a Low‐Temperature Pulsed Laser Annealing Method to Reduce Contact Resistance for CMOS Inverter and 6T‐SRAM on a Wafer‐Scale Flexible Substrate;Advanced Electronic Materials;2023-10-15

2. In Situ Study of the Interface-Mediated Solid-State Reactions during Growth and Postgrowth Annealing of Pd/a-Ge Bilayers;ACS Applied Materials & Interfaces;2023-02-15

3. Low contact resistivity of Ti/TiN/Al for NiSi2 on epitaxial Si:P structure at full low-temperature process below 450 °C;Semiconductor Science and Technology;2021-07-22

4. Phase transition of nickel silicide compounds and their electrical properties;Journal of Materials Science: Materials in Electronics;2021-05-28

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