Low contact resistivity of Ti/TiN/Al for NiSi2 on epitaxial Si:P structure at full low-temperature process below 450 °C-Reference-Cited by-同舟云学术

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Low contact resistivity of Ti/TiN/Al for NiSi2 on epitaxial Si:P structure at full low-temperature process below 450 °C

Published:2021-07-22 Issue:9 Volume:36 Page:09LT01
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Sun Shuang^ORCID,Wang JianHuan,Bi Ran,Li HaiXia,Li XiaoKang,Zhang BaoTong,Cai QiFeng,An Xia,Xu XiaoYan,Huang Ru,Zhang JianJun,Li Ming

Funder

National Major Project

111 Project

National Key Research

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1361-6641/ac0a83/pdf

Reference24 articles.

1. Contact resistivities of metal-insulator-semiconductor contacts and metal-semiconductor contacts

2. A Modified Scheme to Reduce the Specific Contact Resistivity of NiSi/Si Contacts by Means of Dopant Segregation Technique

3. Electrical and microstructural characteristics of Ti contacts on (001)Si

4. Contact Resistivity of Highly Doped Si:P, Si:As, and Si:P:As Epi Layers for Source/Drain Epitaxy

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Achieving ultralow contact resistivity in Si via Te hyperdoping and millisecond post-metallization annealing;Acta Materialia;2024-10

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