Investigations on epitaxy and lattice distortion of sputter deposited β-Ga2O3 layers on GaN templates
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab9326/pdf
Reference40 articles.
1. Dielectric characterization of transparent epitaxial Ga2O3 thin film on n-GaN∕Al2O3 prepared by pulsed laser deposition
2. Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics
3. Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector
4. Electrical Properties of Gallium Oxide Grown by Photoelectrochemical Oxidation of GaN Epilayers
5. Surface morphology evolution and optoelectronic properties of heteroepitaxial Si-doped β-Ga2O3 thin films grown by metal-organic chemical vapor deposition
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