Dielectric characterization of transparent epitaxial Ga2O3 thin film on n-GaN∕Al2O3 prepared by pulsed laser deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2374806
Reference14 articles.
1. Deep-ultraviolet transparent conductive β-Ga2O3 thin films
2. Metal–oxide–semiconductor devices using Ga2O3 dielectrics on n-type GaN
3. GaN metal–oxide–semiconductor structures using Ga-oxide dielectrics formed by photoelectrochemical oxidation
4. Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures
5. Interface properties of thermally oxidized n-GaN metal–oxide–semiconductor capacitors
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