Effect of active-layer composition and structure on device performance of coplanar top-gate amorphous oxide thin-film transistors-Reference-Cited by-同舟云学术

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Effect of active-layer composition and structure on device performance of coplanar top-gate amorphous oxide thin-film transistors

Published:2017-12-12 Issue:1 Volume:33 Page:015012
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Yue Lan^ORCID,Meng Fanxin,Chen Jiarong

Funder

Special and Key Laboratory of Guizhou Provincial Higher Education for Photoelectric information Analysis and Processing, China

Youth’s growth Foundation of Education Department of GuiZhou Province, China

National Natural Science Foundation of China

Science and Technology Foundation of GuiZhou Province, China

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6641/aa9d39/pdf

Reference22 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. 69-1:Invited Paper: Oxide TFT Development for AMLCDs and AMOLEDs

3. The 2016 oxide electronic materials and oxide interfaces roadmap

4. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

5. Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress

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1. Preparation and electrical characteristics of transparent thin film transistors with sputtered aluminum and phosphorus co-doped indium-zinc-oxide channel layer;Solid-State Electronics;2023-10

2. Complex amorphous oxides: property prediction from high throughput DFT and AI for new material search;Materials Advances;2022

3. Investigation on the electrical properties of amorphous IZALO thin-film transistors;Journal of Materials Science: Materials in Electronics;2020-02-14

4. Investigation on the electrical properties of amorphous Indium-Zinc-Titanium-Aluminum Oxide thin film transistors;Materials Science in Semiconductor Processing;2020-02

5. Direct integration of piezoactuator array with active-matrix oxide thin-film transistors using a low-temperature solution process;Sensors and Actuators A: Physical;2019-08

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