69-1:Invited Paper: Oxide TFT Development for AMLCDs and AMOLEDs
Author:
Affiliation:
1. LG Display; 413-811 Paju-si Gyeonggi-do 245 LG-ro, Wollong-myeon Korea
Publisher
Wiley
Reference9 articles.
1. The Physics of Amorphous-Silicon Thin-Film Transistors;Powell;IEEE Elec. Dev.,1989
2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,2004
3. Highly Stable Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors with N2O Plasma Treatment;Yim;SID,2011
4. 55-inch FHD OLED TV employing New Tandem WOLEDs;Han;SID,2012
5. Development of Oxide TFT's Structure;Bae;SID,2013
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1. Enhancement in Performance and Reliability of Transparent IGZO Thin-Film Transistors by ITO/Ti Stacked Source/Drain Contacts;ECS Journal of Solid State Science and Technology;2023-09-01
2. Demonstration of Extended-Gate Structure for Ion Sensors based on Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors;ECS Journal of Solid State Science and Technology;2022-11-01
3. A New Pixel Circuit With Selectively Synchronized Dual-Gated IGZTO TFTs for AMOLED Displays;IEEE Transactions on Electron Devices;2022-10
4. 48.3: Variable Top Gate Oxide TFT Structures for Premium High‐end Display with Process Simplicity and Device Stability;SID Symposium Digest of Technical Papers;2022-10
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