Complex amorphous oxides: property prediction from high throughput DFT and AI for new material search-Reference-Cited by-同舟云学术

Complex amorphous oxides: property prediction from high throughput DFT and AI for new material search

Published:2022 Issue:23 Volume:3 Page:8413-8427
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

van Setten Michiel J.¹²^ORCID,Dekkers Hendrik F. W.¹^ORCID,Pashartis Christopher¹^ORCID,Chasin Adrian¹^ORCID,Belmonte Attilio¹^ORCID,Delhougne Romain¹,Kar Gouri S.¹^ORCID,Pourtois Geoffrey¹³^ORCID

Affiliation:

1. imec, Kapeldreef 75, B-3001 Leuven, Belgium

2. ETSF, European Theoretical Spectroscopy Facility,

3. Department of Chemistry, Plasmant Research Group, University of Antwerp, B-2610 Wilrijk-Antwerp, Belgium

Abstract

To search for the next semiconductor breakthrough, we calculate properties for binary amorphous systems and model to predict them for complex compositions.

Funder

Fonds Wetenschappelijk Onderzoek

Vlaamse regering

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Chemistry (miscellaneous)

Link

http://pubs.rsc.org/en/content/articlepdf/2022/MA/D2MA00759B

Reference129 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices