Influence of defects and indium distribution on emission properties of thick In-rich InGaN layers grown by the DERI technique-Reference-Cited by-同舟云学术

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Influence of defects and indium distribution on emission properties of thick In-rich InGaN layers grown by the DERI technique

Published:2017-01-19 Issue:2 Volume:32 Page:025012
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Dobrovolskas Darius,Mickevičius Jūras,Nargelas Saulius,Vaitkevičius Augustas,Nanishi Yasushi,Araki Tsutomu,Tamulaitis Gintautas

Funder

Lithuanian Research Council

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/32/i=2/a=025012/pdf

Reference31 articles.

1. Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell

2. Guidelines and limitations for the design of high-efficiency InGaN single-junction solar cells

3. Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion

4. Fabrication and characterization of InGaN p-i-n homojunction solar cell

5. Solid phase immiscibility in GaInN

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth and Characterization of High In-content InGaN grown by MBE using Metal Modulated Epitaxy Technique (MME);Journal of Crystal Growth;2019-06

2. Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N 2 and H 2 carrier gas;Chinese Physics B;2018-12

3. Effect of different buffer layers on the quality of InGaN layers grown on Si;AIP Advances;2018-10

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