Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N 2 and H 2 carrier gas
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/27/12/127805/pdf
Reference38 articles.
1. Alloy‐scattering dependence of electron mobility in the ternary gallium, indium, and aluminum nitrides
2. Pseudomorphic thick InGaN growth with a grading interlayer by metal organic chemical vapor deposition for InGaN/GaN p–i–n solar cells
3. Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers
4. Optical and microstructural properties versus indium content in InxGa1−xN films grown by metal organic chemical vapor deposition
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1. Incorporation of indium into GaN layers in the context of MOVPE thermodynamics and growth – Ab initio studies;Computational Materials Science;2023-10
2. Study of the surface chemistry, surface morphology, optical, and structural properties of InGaN thin films deposited by RF magnetron sputtering;Applied Surface Science;2022-06
3. Effect of spiral-like islands on structural quality, optical and electrical performance of InGaN/GaN heterostructures grown by metal organic chemical vapour deposition;Materials Science in Semiconductor Processing;2022-05
4. The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties;Nanoscale Research Letters;2021-11-02
5. The dependence of indium incorporation on specified temperatures in growing InGaN/GaN heterostructure using MOCVD technique;Materials Research Bulletin;2021-05
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