Effect of different buffer layers on the quality of InGaN layers grown on Si-Reference-Cited by-同舟云学术

Effect of different buffer layers on the quality of InGaN layers grown on Si

Published:2018-10 Issue:10 Volume:8 Page:105026
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Gómez V. J.¹^ORCID,Grandal J.²^ORCID,Núñez-Cascajero A.³,Naranjo F. B.³,Varela M.⁴,Sánchez-García M. A.²,Calleja E.²

Affiliation:

1. Independent Researcher, 28039 Madrid, Spain

2. ETSIT-ISOM, Universidad Politécnica de Madrid, Avda. Complutense 30, 28040 Madrid, Spain

3. Grupo de Ingeniería Fotónica, Universidad de Alcalá, Departamento de Electrónica, Alcalá de Henares, 28801 Madrid, Spain

4. Grupo de Física de Materiales Complejos, Departamento de Física de Materiales & Instituto Pluridisciplinar, Universidad Complutense de Madrid, 28040 Madrid, Spain

Funder

Secretaría de Estado de Investigación, Desarrollo e Innovación

H2020 European Research Council

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/1.5046756

Reference30 articles.

1. Solar cell efficiency tables (Version 32)

2. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells

3. Low resistance GaN/InGaN/GaN tunnel junctions

4. GdN Nanoisland-Based GaN Tunnel Junctions

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3. Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE);Results in Physics;2019-03