GdN Nanoisland-Based GaN Tunnel Junctions-Reference-Cited by-同舟云学术

GdN Nanoisland-Based GaN Tunnel Junctions

Published:2013-05-15 Issue:6 Volume:13 Page:2570-2575
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Krishnamoorthy Sriram¹,Kent Thomas F.¹,Yang Jing¹,Park Pil Sung¹,Myers Roberto C.¹,Rajan Siddharth¹

Affiliation:

1. Department of Electrical and Computer Engineering and ‡Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl4006723

Reference36 articles.

1. Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions

2. GaN-Based Light Emitting Diodes with Tunnel Junctions

3. Grundmann, M.Polarization-induced Tunnel Junctions in III-nitrides for Optoelectronic Applications. Ph.D. Thesis, University of California, Santa Barbara, CA, 2007.

4. Multi-color light emitting diode using polarization-induced tunnel junctions

5. Polarization-Induced Zener Tunnel Junctions in Wide-Band-Gap Heterostructures

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