Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1374483
Reference15 articles.
1. Characteristics of InGaN/AlGaN light-emitting diodes on sapphire substrates
2. Multicolored light emitters on silicon substrates
3. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
4. High-transparency Ni/Au ohmic contact to p-type GaN
5. Ridge‐geometry InGaN multi‐quantum‐well‐structure laser diodes
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