Buried channel normally-off AlGaN/GaN MOS-HEMT with a p-n junction in GaN buffer
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aad2bb/pdf
Reference34 articles.
1. Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT
2. A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si
3. GaN Power Transistors on Si Substrates for Switching Applications
4. Gallium nitride devices for power electronic applications
5. Application-based review of GaN HFETs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Study on the Performance of AlGaN/GaN HEMTs Regrown on Mg-Implanted GaN Layers With Low Channel Thickness;IEEE Transactions on Electron Devices;2023-03
2. Confirmation of the compensation of unintentional donors in AlGaN/GaN HEMT structures by Mg-doping during initial growth of GaN buffer layer;Journal of Luminescence;2020-03
3. An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate;Semiconductor Science and Technology;2019-11-08
4. Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates;Journal of Applied Physics;2018-12-28
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