Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates

Published:2018-12-28 Issue:24 Volume:124 Page:245104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Soman Rohith¹²^ORCID,Mohan Nagaboopathy¹,Chandrasekar Hareesh¹³^ORCID,Bhat Navakanta¹²,Raghavan Srinivasan¹³

Affiliation:

1. Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012, India

2. Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India

3. Materials Research Centre, Indian Institute of Science, Bangalore 560012, India

Funder

National Mission on Power Electronics Technology

Ministry of Electronics and Information technology

Department of Science and Technology, Government of Rajasthan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5063420

Reference46 articles.

1. Thermal Annealing Effects on P-Type Mg-Doped GaN Films

2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

3. Doping of III-nitride materials

4. All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications

5. GaN-based light-emitting diodes on various substrates: a critical review

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanowire Template Assisted Epitaxy of Ultrawide Bandgap III-Nitrides on Si: Role of the Nanowire Template;ACS Applied Optical Materials;2023-03-14

2. The road ahead for ultrawide bandgap solar-blind UV photodetectors;Journal of Applied Physics;2022-04-21

3. Impact of doping on the morphology, structure and optical properties of c-oriented GaN nanorods;Materials Research Bulletin;2021-10

4. Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects;Journal of Physics D: Applied Physics;2020-09-21

5. Room-temperature photoluminescence of Mg-doped GaN thin films grown by plasma-assisted MOCVD;AIP Advances;2020-04-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3