All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications
Author:
Affiliation:
1. Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany
2. Institut für Optik und Atomare Physik, Technische Universität Berlin, Straße des 17. Juni 136, 10623 Berlin, Germany
Funder
Deutsche Forschungsgemeinschaft (DFG)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4978268
Reference31 articles.
1. GaInN-Based Tunnel Junctions in n–p–n Light Emitting Diodes
2. Polarization-engineered GaN/InGaN/GaN tunnel diodes
3. InGaN based micro light emitting diodes featuring a buried GaN tunnel junction
4. Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy
5. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact
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