Polarization-engineered GaN/InGaN/GaN tunnel diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3517481
Reference17 articles.
1. New Phenomenon in Narrow Germaniump−nJunctions
2. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells
3. GaAs‐AlGaAs tunnel junctions for multigap cascade solar cells
4. Vertical Tunnel Field-Effect Transistor
5. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
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