Electrical characterization of n-doped SiGeSn diodes with high Sn content-Reference-Cited by-同舟云学术

Electrical characterization of n-doped SiGeSn diodes with high Sn content

Published:2018-11-15 Issue:12 Volume:33 Page:124017
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Clausen Caterina J^ORCID,Fischer Inga A,Weisshaupt David,Baerwolf Florian^ORCID,Tillack Bernd,Colston Gerard,Myronov Maksym,Oehme Michael,Schulze Joerg

Funder

Deutsche Forschungsgemeinschaft

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6641/aae3ab/pdf

Reference15 articles.

1. Strain-Balanced ${\rm Ge}_{z}{\rm Sn}_{1-z}\hbox{--}{\rm Si}_{x}{\rm Ge}_{y}{\rm Sn}_{1-x-y}$ Multiple-Quantum-Well Lasers

2. Growth and characterization of SiGeSn quantum well photodiodes

3. Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells

4. Tunable Optical Gap at a Fixed Lattice Constant in Group-IV Semiconductor Alloys

5. Compositional dependence of the band-gap of Ge1−x−ySixSny alloys

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