Raman shifts in MBE‐grown Si x Ge 1 − x − y Sn y alloys with large Si content-Reference-Cited by-同舟云学术

Raman shifts in MBE‐grown Si x Ge 1 − x − y Sn y alloys with large Si content

Published:2021-03-24 Issue:6 Volume:52 Page:1167-1175
ISSN:0377-0486
Container-title:Journal of Raman Spectroscopy
language:en
Short-container-title:J Raman Spectrosc

Author:

Schlipf Jon¹^ORCID,Tetzner Henriette²^ORCID,Spirito Davide²^ORCID,Manganelli Costanza L.²^ORCID,Capellini Giovanni²³^ORCID,Huang Michael R. S.⁴,Koch Christoph T.⁴^ORCID,Clausen Caterina J.⁵^ORCID,Elsayed Ahmed⁵,Oehme Michael⁵,Chiussi Stefano⁶^ORCID,Schulze Jörg⁵,Fischer Inga A.¹⁵^ORCID

Affiliation:

1. Department of Experimental Physics and Functional Materials BTU Cottbus–Senftenberg Cottbus Germany

2. Department of Material Research‐Semiconductor Optoelectronics IHP—Leibniz‐Institut für innovative Mikroelektronik Frankfurt Germany

3. Dipartimento di Scienze Universita degli Studi Roma Tre Rome Italy

4. AG Strukturforschung/Elektronenmikroskopie HU Berlin Berlin Germany

5. Institut für Halbleitertechnik Universität Stuttgart Stuttgart Germany

6. CINTECX Universidade de Vigo Vigo Spain

Funder

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Spectroscopy,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jrs.6098

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