Growth and characterization of SiGeSn quantum well photodiodes-Reference-Cited by-同舟云学术

Growth and characterization of SiGeSn quantum well photodiodes

Published:2015-09-16 Issue:19 Volume:23 Page:25048
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Fischer Inga A.,Wendav Torsten,Augel Lion,Jitpakdeebodin Songchai,Oliveira Filipe,Benedetti Alessandro,Stefanov Stefan,Chiussi Stefano,Capellini Giovanni,Busch Kurt,Schulze Jörg

Funder

Consejo Superior de Investigaciones Científicas (Spanish National Research Council)

Deutsche Forschungsgemeinschaft (DFG)

Stiftung der Deutschen Wirtschaft

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference21 articles.

1. Compositional dependence of the direct and indirect band gaps in Ge1−ySnyalloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic andn-type materials

2. Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing

3. Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

4. High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon

5. Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy

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