Abstract
Abstract
We investigate the benefits of the use of arrays of vertical nanowire (vNW) field-effect transistors (FETs) to implement integrated circuits. By means of technology computer aided design and circuit simulations, the optimal dimensions of the vNWFETs are determined. Device and circuit variability levels have been investigated. The benefits of using array configurations are the decrease of the response time and a significant mitigation of the variability level as the number of the elements in the array increases.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
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