Si and SiC Schottky diodes in smart power circuits: a comparative study byI–V–TandC–Vmeasurements
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference6 articles.
1. Monolithically integrated power MOSFET and Schottky diode with improved reverse recovery characteristics
2. A silicon carbide CMOS intelligent gate driver circuit with stable operation over a wide temperature range
3. Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers
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3. The current–voltage and capacitance–voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs;Materials Research Bulletin;2014-05
4. Temperature-dependent current–voltage characteristics of Er-silicide Schottky contacts to strained Si-on-insulator;Journal of Alloys and Compounds;2013-04
5. The voltage pulse degraded Ti/4H–SiC Schottky diodes studied with I–V and low frequency noise measurements;Diamond and Related Materials;2007-01
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