The current–voltage and capacitance–voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs-Reference-Cited by-同舟云学术

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The current–voltage and capacitance–voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs

Published:2014-05 Issue: Volume:53 Page:211-217
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Özerli Halil,Karteri İbrahim,Karataş Şükrü,Altindal Şemsettin

Funder

Kahramanmaraş Sütcü İmam University Scientific Research Project (BAB)

FEF-Research Project

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference53 articles.

1. Metal–Semiconductor Contacts;Rhoderick,1988

2. Physics of Semiconductor Devices;Sze,1981

3. Recent advances in Schottky barrier concepts

4. Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures

5. Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates

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