Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference34 articles.
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4. Structural properties of GaAs/Ge heterostructures as a function of growth conditions
5. The effect of the growth rate on the low pressure metalorganic vapour phase epitaxy of GaAs/Ge heterostructures
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