Temperature-dependent current–voltage characteristics of Er-silicide Schottky contacts to strained Si-on-insulator-Reference-Cited by-同舟云学术

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Temperature-dependent current–voltage characteristics of Er-silicide Schottky contacts to strained Si-on-insulator

Published:2013-04 Issue: Volume:556 Page:252-258
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Jyothi I.,Seo Min-Woo,Janardhanam V.,Shim Kyu-Hwan,Lee Young-Boo,Ahn Kwang-Soon,Choi Chel-Jong

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference53 articles.

1. Strained-Silicon Heterojunction Bipolar Transistor

2. Determination of the interface properties of Ni-silicided strained-Si/SiGe heterostructure Schottky diodes using capacitance–voltage technique

3. Electron transport in strained Si layers on Si1−xGexsubstrates

4. Fully Depleted n-MOSFETs on Supercritical Thickness Strained SOI

5. Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETs

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4. Optoelectronic enhancement of ZnO/p-Si Schottky barrier photodiodes by (Sn,Ti) co-doping;Physica B: Condensed Matter;2023-10

5. Temperature-dependent Schottky diode behavior of Ni Schottky contacts to α-Ga2O3 film epitaxially grown on sapphire substrate;Materials Science in Semiconductor Processing;2023-08

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