Ultrashallow defects in SiC MOS capacitors
Author:
Funder
Unitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii
Publisher
Elsevier BV
Reference22 articles.
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3. Effect of nitrogen implantation at the SiO2 /SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel;Poggi;J. Appl. Phys.,2010
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