Effects of model polymer chain architectures of photo-resists on line-edge-roughness: Monte Carlo simulations
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference8 articles.
1. Roughness analysis of lithographically produced nanostructures: off-line measurement and scaling analysis
2. Quantification of line-edge roughness of photoresists. I. A comparison between off-line and on-line analysis of top-down scanning electron microscopy images
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4. Photoresist line-edge roughness analysis using scaling concepts
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2. Synthesis of chemically amplified photoresist polymer containing four (Meth)acrylate monomers via RAFT polymerization and its application for KrF lithography;Journal of Polymer Research;2016-04-28
3. Stochastic modeling and simulation of photoresist surface and line-edge roughness evolution;European Polymer Journal;2010-10
4. Effects of lithography non-uniformity on device electrical behavior. Simple stochastic modeling of material and process effects on device performance;Journal of Computational Electronics;2007-01-18
5. Effects of model polymer chain architectures and molecular weight of conventional and chemically amplified photoresists on line-edge roughness. Stochastic simulations;Microelectronic Engineering;2006-04
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