Stochastic modeling and simulation of photoresist surface and line-edge roughness evolution
Author:
Publisher
Elsevier BV
Subject
Organic Chemistry,Polymers and Plastics,General Physics and Astronomy,Materials Chemistry
Reference43 articles.
1. Mo/Si multilayers with enhanced TiO 2 - and RuO 2 -capping layers
2. An experimentally validated analytical model for gate line-edge roughness (LER) effects on technology scaling
3. Experimental Investigation of the Impact of LWR on Sub-100-nm Device Performance
4. Is Gate Line Edge Roughness a First-Order Issue in Affecting the Performance of Deep Sub-Micro Bulk MOSFET Devices?
5. A Simulation Study of Gate Line Edge Roughness Effects on Doping Profiles of Short-Channel MOSFET Devices
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1. Predicting resist pattern collapse in EUVL using machine learning;38th European Mask and Lithography Conference (EMLC 2023);2023-10-05
2. Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study;Micromachines;2021-11-30
3. Molecular Modeling of EUV Photoresist Revealing the Effect of Chain Conformation on Line-Edge Roughness Formation;Polymers;2019-11-22
4. Sidewall roughness in nanolithography: origins, metrology and device effects;Nanolithography;2014
5. Molecular simulation of pattern formation in electron beam lithography;Microelectronic Engineering;2013-12
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