A Simulation Study of Gate Line Edge Roughness Effects on Doping Profiles of Short-Channel MOSFET Devices
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/28233/01262651.pdf?arnumber=1262651
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