InAsSb on GaAs (001): influence of the arsenic molecules form on composition and crystalline properties of MBE layers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/643/i=1/a=012006/pdf
Reference12 articles.
1. InAs1−xSbx infrared detectors
2. Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxy
3. InAs0.85Sb0.15infrared photodiodes grown on GaAs and GaAs‐coated Si by molecular beam epitaxy
4. Characteristics of InAs0.8Sb0.2photodetectors on GaAs substrates
5. High-Sensitivity InAsSb Photoconductors with a Response Wavelength Range of 2–9 µm Operated at Room Temperature
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2. Structural Analysis of InAs1−xSbx Epilayer Considering Occurrence of Crystallographic Tilt Exploiting High-Resolution X-Ray Diffraction;Electronic Materials Letters;2021-12-29
3. Molecular Beam Epitaxy of InAsSb Solid Solution: Effect of Growth Rate on Composition of Epitaxial Layers;Optoelectronics, Instrumentation and Data Processing;2020-09
4. The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy;Semiconductors;2019-04
5. Atomic Structure of Semiconductor Low-Dimensional Heterosystems;Advances in Semiconductor Nanostructures;2017
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