Structural Analysis of InAs1−xSbx Epilayer Considering Occurrence of Crystallographic Tilt Exploiting High-Resolution X-Ray Diffraction
Author:
Funder
Korea Research Institute of Standards and Science
National Research Foundation of Korea
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s13391-021-00329-1.pdf
Reference24 articles.
1. Murawski, K., et al.: Bandgap energy determination of InAsSb epilayers grown by molecular beam epitaxy on GaAs substrates. Prog. Nat. Sci. Mater. Int. 29(4), 472–476 (2019). https://doi.org/10.1016/J.PNSC.2019.08.005
2. Zhang, L., Yu, P., Yao, S., Feng, D., Dai, J.: Direct Bandgap Type-I Ge Quantum Dots/GeSnSi for SWIR and MWIR Lasers. Electron. Mater. Lett. (2021). https://doi.org/10.1007/s13391-021-00323-7
3. Li, Q., Ng, K.W., Lau, K.M.: Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon. Appl. Phys. Lett. (2015). https://doi.org/10.1063/14913432
4. Giani, A., Podlecki, J., Pascal-Delannoy, F., Bougnot, G., Gouskov, L., Catinaud, C.: Elaboration and characterization of InAsSb grown on GaSb and GaAs substrates. J. Cryst. Growth 148(1–2), 25–30 (1995). https://doi.org/10.1016/0022-0248(94)00828-0
5. Rakovska, A., Berger, V., Marcadet, X., Vinter, B., Bouzehouane, K., Kaplan, D.: Optical characterization and room temperature lifetime measurements of high quality MBE-grown InAsSb on GaSb. Semicond. Sci. Technol. 15(1), 34 (2000). https://doi.org/10.1088/0268-1242/15/1/306
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