Bandgap energy determination of InAsSb epilayers grown by molecular beam epitaxy on GaAs substrates-Reference-Cited by-同舟云学术

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Bandgap energy determination of InAsSb epilayers grown by molecular beam epitaxy on GaAs substrates

Published:2019-08 Issue:4 Volume:29 Page:472-476
ISSN:1002-0071
Container-title:Progress in Natural Science: Materials International
language:en
Short-container-title:Progress in Natural Science: Materials International

Author:

Murawski K.,Gomółka E.,Kopytko M.,Grodecki K.,Michalczewski K.,Kubiszyn Ł.,Gawron W.,Martyniuk P.,Rogalski A.,Piotrowski J.

Funder

National Center for Research and Development

Publisher

Elsevier BV

Subject

General Materials Science

Reference42 articles.

1. Band parameters for III–V compound semiconductors and their alloys

2. Long‐wavelength photoluminescence of InAs1−xSbx(0

3. InAs1−xSbx infrared detectors

4. Solid Solution in AIIIBVCompounds

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1. High electron mobility in metamorphic epitaxial InAs0.7Sb0.3 compound and its p-i-n photodetector;Journal of Alloys and Compounds;2024-06

2. Empirical tight-binding method for large-supercell simulations of disordered semiconductor alloys;Physica Scripta;2024-05-31

3. Infrared Barrier Detectors With Metamorphic InAsSb Absorbers on GaAs Substrates;IEEE Sensors Journal;2024-05-01

4. Exploring the optical property of InAs1−xSbx-based nBn structures for high-temperature mid-wave infrared detection;Applied Physics Letters;2024-04-29

5. Advances in infrared linear mode avalanche photodiodes based on antimonide based semiconductors;Reference Module in Materials Science and Materials Engineering;2024

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