InAs0.85Sb0.15infrared photodiodes grown on GaAs and GaAs‐coated Si by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106711
Reference15 articles.
1. InAs1−xSbx infrared detectors
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3. Demonstration of an InAsSb strained‐layer superlattice photodiode
4. Backside‐illuminated InAs1−xSbx‐InAs narrow‐band photodetectors
5. Backside‐illuminated InAsSb/GaSb broadband detectors
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