High-Sensitivity InAsSb Photoconductors with a Response Wavelength Range of 2–9 µm Operated at Room Temperature
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference11 articles.
1. Long‐wavelength InAsSb photoconductors operated at near room temperatures (200–300 K)
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3. Growth of InSb and InAs1−xSbxon GaAs by molecular beam epitaxy
4. Long wavelength (3–5 and 8–12 μm) photoluminescence of InAs1−xSbxgrown on (100) GaAs by molecular‐beam epitaxy
5. OMVPE growth of InAsSb using novel precursors
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3. InAs0.91Sb0.09photoconductor for near and middle infrared photodetection;Physica Scripta;2016-09-29
4. InAsSb on GaAs (001): influence of the arsenic molecules form on composition and crystalline properties of MBE layers;Journal of Physics: Conference Series;2015-11-02
5. Evaluation of electronic transport properties and conduction band offsets of asymmetric InAs/InxGa1−xAs/GaAs dot-in-well structures;Journal of Physics D: Applied Physics;2012-08-28
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