Synthesis of organic photoresist of Hibiscus tiliaceus L. flowers for patterning with X-Ray and UV exposure

Abstract

Abstract Photoresist is an essential chemical used in patterning the microelectronic devices. To ensure the sustainability of the supply of raw materials of microelectronics industry such as photoresist need to look for alternative materials that are more eco-friendly. This study used natural ingredients of Hibiscus tiliaceus L. flowers extract. The manufacture of photoresists carried in four stages, the manufacture of Hibiscus tiliaceus L. flowers extract, the manufacture of thin film Hibiscus tiliaceus L. flowers extract, the manufacture of resist and the manufacture of thin film photoresist. The manufacture of Hibiscus tiliaceus L. flowers extract is done with mass fraction variations using distillation methods. The optical properties of Hibiscus tiliaceus L. flowers extract was characterized using ocean optic Vis-NIR USB 4000. The functional group was characterized using the Perkin Elmer Frontier FT-IR, while the surface structure was characterized using the Digital CCD Microscope MS-804 Scopeman and the electrical properties were characterized using the Elkahfi 100 I-V Meter. The density of the resist is characterized by the mass per volume method. Thin film of photoresist is grown through the spin coating method with a voltage of 10 V for 60 s and heating to a temperature of 200°C for characterization of surface structures and optical properties. Photoresist is tested for sensitivity by giving exposure to UV and X-ray radiation sources to photoresist material. The resulting photoresist has a value of absorbance that is located in the wavelength range of 350 to 1050 nm with a maximum absorbance value of 0.07 to 0.3 at the wavelength of the g-line, h-line and i-line.