Research on suppressing brittle fracture and implementing ductile mode cutting for improving surface quality at silicon wafers manufacturing

Author:

Kovalchenko A M,Pashchenko E O,Savchenko D O

Abstract

Abstract Single crystal silicon is an important basic material used to manufacture electronic and photovoltaic devices. Ductile mode of diamond wire sawing is a promising method for silicon wafering in order to produce wafers with minimal surface damage. To achieve ductile mode, the correct applying of cutting parameters and careful wire design is necessary. This study investigates the scratching of monocrystalline silicon by the abrasive particles of different geometry, which simulates the material removal process in diamond wire sawing. Diamonds, crushed and spherical tungsten carbide (WC) particles served as abrasives. Experiments show that spherical abrasives enhance ductile mode cutting significantly decreasing brittle damage when compared to irregular shape particles. Spherical WC particles permit to increase the critical load and critical cut depth of ductile-to-brittle transition from 5 to 10 times. The depth of the damaged subsurface layer decreased from 5 µm to 0.2 µm due to the absence of brittle cracks. A uniform regular distribution and appropriate suitable density of abrasive particles is obligatory for cracking reduction. For that, the method of diamond particles uniform deposition with the controlled density by a polymer binder combining high modulus and adhesive capacity with good flexibility was elaborated. The method includes preliminary diamond particles fixation on a thin resin layer providing high uniformity and subsequent strong fixation by a thicker resin layer. The research on ovalization of diamond particles was performed for smoothening cutting edges. The method is based on the activation of the graphitization process at sharp edges of particles under the action of metal salts at increased temperatures.

Publisher

IOP Publishing

Subject

General Physics and Astronomy

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