Correlated parallel electron transport in double- and triple-island single-electron transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1742-6596/1482/1/012027/pdf
Reference13 articles.
1. Single-electron tunneling through an individual arsenic dopant in silicon
2. Sequential reduction of the silicon single-electron transistor structure to atomic scale
3. Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography
4. An analytical approach to model capacitance and resistance of capped carbon nanotube single electron transistor
5. Analysis and Modeling of Fullerene Single Electron Transistor Based on Quantum Dot Arrays at Room Temperature
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