An analytical approach to model capacitance and resistance of capped carbon nanotube single electron transistor-Reference-Cited by-同舟云学术

An analytical approach to model capacitance and resistance of capped carbon nanotube single electron transistor

Published:2018-06 Issue: Volume:90 Page:97-102
ISSN:1434-8411
Container-title:AEU - International Journal of Electronics and Communications
language:en
Short-container-title:AEU - International Journal of Electronics and Communications

Author:

KhademHosseini Vahideh,Dideban Daryoosh,Ahmadi Mohammad Taghi,Ismail Razali

Funder

Fundamental Research Grant Scheme (FRGS)

University of Kashan

Universiti Teknologi Malaysia (UTM)

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Reference46 articles.

5. Observation of single-electron charging effects in small tunnel junctions;Fulton;Phys Rev Lett,1987

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