Single-electron tunneling through an individual arsenic dopant in silicon-Reference-Cited by-同舟云学术

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Single-electron tunneling through an individual arsenic dopant in silicon

Published:2017 Issue:2 Volume:9 Page:613-620
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Shorokhov V. V.,Presnov D. E.,Amitonov S. V.,Pashkin Yu. A.,Krupenin V. A.

Funder

Engineering and Physical Sciences Research Council

Royal Society

Russian Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2017/NR/C6NR07258E

Reference36 articles.

1. P. Gargini , ITRS past, present and future (2015) [Online], http://www.itrs2.net/itrs-reports.html

2. Single dopants in semiconductors

3. Silicon quantum electronics

4. A silicon-based nuclear spin quantum computer

5. A single-atom electron spin qubit in silicon

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