Investigation of absolute atomic fluorine density in a capacitively coupled SF6/O2/Ar and SF6/Ar discharge
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics
Link
http://stacks.iop.org/0963-0252/23/i=6/a=065029/pdf
Reference58 articles.
1. Mechanisms of silicon etching in fluorine- and chlorine-containing plasmas
2. Etching of high aspect ratio structures in Si using SF[sub 6]/O[sub 2] plasma
3. Profile control of high aspect ratio trenches of silicon. I. Effect of process parameters on local bowing
4. Real-time control of electron density in a capacitively coupled plasma
5. Comparison of the Fluorine Atom Density Measured by Actinometry and Vacuum Ultraviolet Absorption Spectroscopy
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