Etching of Ga-based III - V semiconductors in inductively coupled Ar and -based plasma chemistries-Reference-Cited by-同舟云学术

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Etching of Ga-based III - V semiconductors in inductively coupled Ar and -based plasma chemistries

Published:1997-11-01 Issue:4 Volume:6 Page:499-507
ISSN:0963-0252
Container-title:Plasma Sources Science and Technology
language:
Short-container-title:Plasma Sources Sci. Technol.

Author:

Lee J W,Abernathy C R,Pearton S J,Constantine C,Shul R J,Hobson W S

Publisher

IOP Publishing

Subject

Condensed Matter Physics

Reference25 articles.

1. Control of multipolar electron cyclotron resonance discharges using internal cavity impedance matchinga)

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2. Kinetics and mechanisms for ion-assisted etching of InP thin films in HBr + Cl2 + Ar inductively coupled plasma with various HBr/Cl2 mixing ratios;Thin Solid Films;2018-08

3. Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-07

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