Room temperature operated diffraction limited λ ≃ 3 µm diode lasers with 37 mW of continuous‐wave output power
Author:
Affiliation:
1. State University of New York at Stony BrookStony BrookNY11794‐2350USA
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2013.0804
Reference7 articles.
1. The 3.0–3.2 µm wavelength range narrow ridge waveguide Sb‐based semiconductor diode lasers operating up to 333 K;Soibel A.;Semicond. Sci. Technol.,2011
2. Continuous wave single mode operation of GaInAsSb/GaSb quantum well lasers emitting beyond 3 µm;Lehnhardt T.;Appl. Phys. Lett.,2008
3. External cavity tunable type‐I diode laser with continuous‐wave singlemode operation a 3.24 µm;Gupta J.A.;Electron. Lett.,2010
4. Single spatial mode 2–2.2 µm diode lasers fabricated by selective wet etching;Jung S.;Semicond. Sci. Technol.,2012
5. Single spatial mode 3 µm diode lasers with continuous‐wave output power of 15 mW at room temperature;Hosoda T.;Electron. Lett.,2011
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