Modeling Cl2/O2/Ar inductively coupled plasmas used for silicon etching: effects of SiO2chamber wall coating
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics
Reference54 articles.
1. Influence of the reactor wall composition on radicals’ densities and total pressure in Cl2 inductively coupled plasmas: II. During silicon etching
2. Role of etch products in polysilicon etching in a high-density chlorine discharge
3. Effects of Chamber Wall Conditions on Cl Concentration and Si Etch Rate Uniformity in Plasma Etching Reactors
4. Analysis of the chemical composition and deposition mechanism of the SiO[sub x]–Cl[sub y] layer on the plasma chamber walls during silicon gate etching
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