Influence of the reactor wall composition on radicals’ densities and total pressure in Cl2 inductively coupled plasmas: II. During silicon etching
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2803881
Reference37 articles.
1. Pulse‐time‐modulated electron cyclotron resonance plasma etching with low radio‐frequency substrate bias
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3. Plasma etching of AlN/AlGaInN superlattices for device fabrication
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5. Measurements of the Cl atom concentration in radio‐frequency and microwave plasmas by two‐photon laser‐induced fluorescence: Relation to the etching of Si
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