Analysis of the chemical composition and deposition mechanism of the SiO[sub x]–Cl[sub y] layer on the plasma chamber walls during silicon gate etching-Reference-Cited by-同舟云学术

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Analysis of the chemical composition and deposition mechanism of the SiO[sub x]–Cl[sub y] layer on the plasma chamber walls during silicon gate etching

Published:2004 Issue:3 Volume:22 Page:624
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:J. Vac. Sci. Technol. A

Author:

Kogelschatz Martin,Cunge Gilles,Sadeghi Nader

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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