Comparisons of NF3 plasma-cleaned Y2O3, YOF, and YF3 chamber coatings during silicon etching in Cl2 plasmas
Author:
Affiliation:
1. Department of Chemical and Biomolecular Engineering, University of Houston, Houston, Texas 77204
Funder
Samsung
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.5026777
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