Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage (2.75 V@350 mA, >95%)-Reference-Cited by-同舟云学术

Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage (2.75 V@350 mA, >95%)

Published:2014-02-26 Issue:11 Volume:47 Page:115102
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Tian Ting^ORCID,Wang Liancheng,Guo Enqing,Liu Zhiqiang,Zhan Teng,Guo Jinxia,Yi Xiaoyan,Li Jing,Wang Guohong

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/47/i=11/a=115102/pdf

Reference25 articles.

1. Solid-State Light Sources Getting Smart

2. Prospects for LED lighting

3. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

4. High-power AlGaInN flip-chip light-emitting diodes

5. Performance enhancement of InGaN light-emitting diodes by laser lift-off and transfer from sapphire to copper substrate

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