Electrical properties of Bi3.25La0.75Ti3O12/LaAlO3/Si structures for ferroelectric field effect transistor applications-Reference-Cited by-同舟云学术

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Electrical properties of Bi3.25La0.75Ti3O12/LaAlO3/Si structures for ferroelectric field effect transistor applications

Published:2004-02-24 Issue:6 Volume:37 Page:832-835
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Wang Yi-Jun,Li Ai-Dong,Wu Di,Shao Qi-Yue,Ling Hui-Qin,Lu Xu-Bin,Liu Zhi-Guo,Ming Nai-Ben

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/37/i=6/a=004/pdf

Reference17 articles.

1. A new solid state memory resistor

2. Interaction ofPbTiO3Films with Si Substrate

3. Memory retention and switching behavior of metal-ferroelectric-semiconductor transistors

4. Generalized scale length for two-dimensional effects in MOSFETs

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Approximations to defect chemistry in Bi4Ti3O12;Functional Materials Letters;2016-12

2. Large memory window and good retention characteristics of ferroelectric-gate field-effect transistor with Pt/Bi3.4Ce0.6Ti3O12/CeO2/Si structure;Journal of Physics D: Applied Physics;2011-12-20

3. Ferroelectric properties of Bi4−xLaxTi3O12 (x=0, 0.75) thin films prepared by sol–gel method;Materials Science and Engineering: B;2007-09

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