Ferroelectric properties of Bi4−xLaxTi3O12 (x=0, 0.75) thin films prepared by sol–gel method-Reference-Cited by-同舟云学术

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Ferroelectric properties of Bi4−xLaxTi3O12 (x=0, 0.75) thin films prepared by sol–gel method

Published:2007-09 Issue:2-3 Volume:142 Page:135-138
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Guo Dong-Yun,Li Mei-Ya,Liu Jun,Fu Linjie,Wang Jing,Yu Ben-Fang,Yang Bin

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Ferroelectric Memories

2. Lanthanum-substituted bismuth titanate for use in non-volatile memories

3. High-performance solution-processed polymer ferroelectric field-effect transistors

4. Applications of Modern Ferroelectrics

5. Structural visualization of polarization fatigue in epitaxial ferroelectric oxide devices

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Decrypting the effects of isovalent zirconium ions content on crystallographic phase formation, microstructure, dielectric, electrical, impedance, and modulus spectroscopic traits of (1 − y) [Bi3.25La0.75(Ti1−xZrx)3O12] + (y) [La0.70Sr0.30MnO3] composite ceramics;Journal of Materials Science: Materials in Electronics;2024-04

2. Perovskite Oxide Ferroelectric Thin Films;Advanced Electronic Materials;2022-03-25

3. A study on structural stability of bismuth titanate with lanthanum doping for improved ferroelectric properties;Bulletin of Materials Science;2017-05-13

4. Improvement in dielectric and ferroelectric property of dysprosium doped barium bismuth titanate ceramic;Journal of Materials Science: Materials in Electronics;2016-03-19

5. Structural investigation of interface and defects in epitaxial Bi3.25La0.75Ti3O12 film on SrRuO3/SrTiO3 (111) and (100);Journal of Applied Physics;2013-01-28

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